In-line monitoring of chemical-mechanical polishing processes

被引：4

作者：

Hetherington, DL ^{[1
]}

Stein, DJ ^{[1
]}

机构：

[1] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

IN-LINE METHODS AND MONITORS FOR PROCESS AND YIELD IMPROVEMENT | 1999年 / 3884卷

关键词：

chemical mechanical polishing; CMP; planarization; endpoint; in-line monitoring; process control;

D O I：

10.1117/12.361329

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

We present an overview of in-line monitoring of chemical-mechanical polishing (CMP) processes. We discuss the technical challenges and review many of the approaches that have been published. Several methods rue currently under investigation including optical, thermal (pad temperature), friction (torque motor current), electrochemical, and acoustic (vibration).

引用

页码：24 / 35

页数：12

共 37 条

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