Thermal Characterization of Si3N4 Thin Films Using Transient Thermoreflectance Technique

被引：33

作者：

Bai, Suyuan ^{[1
,2
]}

Tang, Zhenan ^{[3
]}

Huang, Zhengxing ^{[3
]}

Yu, Jun ^{[3
]}

机构：

[1] Dalian Univ Technol, Sch Elect & Informat Engn, Dept Elect Engn, Dalian 116024, Peoples R China

[2] Liaoning Normal Univ, Sch Phys & Elect Technol, Dalian 116029, Peoples R China

[3] Dalian Univ Technol, Inst Microelect, Dalian 116024, Peoples R China

来源：

IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS | 2009年 / 56卷 / 08期

基金：

中国国家自然科学基金;

关键词：

Genetic algorithms (GAs); interfacial thermal resistance (ITR); thermal conductivity (TC); transient thermoreflectance technique; CONDUCTIVITY; DIFFUSIVITY; SILICON;

D O I：

10.1109/TIE.2009.2022078

中图分类号：

TP [自动化技术、计算机技术];

学科分类号：

0812 ;

摘要：

In this paper, we measure the thermal conductivities (TCs) of Si3N4 thin films prepared by lower pressure chemical vapor deposition with thickness ranging from 37 to 200 nm. The measurements were made at room temperature using a transient thermoreflectance technique. A three-layer model based on the transmission-line theory and the genetic algorithms were applied to obtain the TC of thin films and the interfacial thermal resistance (ITR). The results show that the value of the TC is 1.24-2.09 W . m(-1) . K-1. The ITR between the metal layer and the thin film is about 1.2 x 10(-8) m(2) . K . W-1. The estimated uncertainty of the TC is less than 18%.

引用

页码：3238 / 3243

页数：6

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