Dual-gate AlGaN/GaN MIS-HEMTs using Si3N4 as the gate dielectric

被引：8

作者：

Gao, Tao ^{[1
,2
]}

Xu, Ruimin ^{[2
]}

Zhang, Kai ^{[1
]}

Kong, Yuechan ^{[1
]}

Zhou, Jianjun ^{[1
]}

Kong, Cen ^{[1
]}

Dong, Xun ^{[1
]}

Chen, Tangsheng ^{[1
]}

Hao, Yue ^{[3
]}

机构：

[1] Nanjing Elect Devices Inst, Sci & Technol Monolith Integrated Circuits & Modu, Nanjing, Jiangsu, Peoples R China

[2] Univ Elect Sci & Technol China, Fundamental Sci EHF Lab, Chengdu 610054, Peoples R China

[3] Xidian Univ, Sch Microelect, Xian, Peoples R China

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2015年 / 30卷 / 11期

基金：

中国国家自然科学基金;

关键词：

AlGaN/GaN; dual-gate configuration; metal-insulator-semiconductor (MIS); power gain; ELECTRON-MOBILITY TRANSISTORS; FIELD-EFFECT TRANSISTORS; BREAKDOWN VOLTAGE; ENHANCEMENT;

D O I：

10.1088/0268-1242/30/11/115010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have investigated dual-gate AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors (MIS-HEMTs) using Si3N4 as the gate dielectric by comparison with singlegate MIS-HEMTs. It is shown that the presence of the second gate induces a slight reduction in the maximum output current, transconductance and breakdown voltage, but with the advantages of 5 dB enhanced power gain and higher fT/fmax. Combined with a physics-based device simulation, the breakdown characteristics of the dual-gate device are revealed to be dependent on the second gate. These results demonstrate that the incorporation of dual-gate configuration into the MIS gate is a potential alternative for GaN-based high-power and high-frequency applications.

引用

页数：5

共 13 条

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