Insights on the optoelectronic properties in two-dimensional Janus lateral In2SeTe/Ga2STe heterostructure

被引:10
作者
Guo, Gang [1 ]
Zhang, Guanhua [3 ]
Wu, Hao [2 ]
Zhang, Yong [1 ]
Xie, Zhongxiang [1 ]
机构
[1] Hunan Inst Technol, Dept Math & Phys, Hengyang 421002, Peoples R China
[2] Hunan Normal Univ, Key Lab Low Dimens Quantum Struct & Quantum Contr, Synerget Innovat Ctr Quantum Effects & Applicat, Minist Educ,Sch Phys & Elect, Changsha 410081, Peoples R China
[3] Xiangtan Univ, Sch Phys & Optoelect Engn, Xiangtan 411105, Peoples R China
基金
中国国家自然科学基金;
关键词
Janus monolayer; Lateral heterostructure; Indium selenide telluride; Gallium sulfide telluride; Optoelectronic properties; SUPERIOR OPTICAL-ABSORPTION; SUITABLE DIRECT-GAP; ELECTRONIC-PROPERTIES; MONOLAYER; PROGRESS; HETEROJUNCTIONS; MOBILITY;
D O I
10.1016/j.tsf.2020.138479
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper, the lateral heterostructures combined with monolayer Janus compounds Indium selenide telluride (In2SeTe) and Gallium sulfide telluride (Ga2STe) are investigated by first-principles calculations. Phonon spectrum analysis indicates that two Janus lateral In2SeTe/Ga2STe heterostructures combined in different ways can be formed steadily. The calculations show that two heterostructures exhibit type-II band alignment, which is key to the separation of photocarriers. The lateral In2SeTe/Ga2STe heterostructure has a direct band gap of 1.50 eV, in line with high-performance excitonic solar cells. The ternary systems show higher optical absorption coefficient in the visible light region and better two-dimensional electron mobility than the binary lateral heterostructure InS/InSe. Finally, the photoelectric conversion efficiency of the Janus In2SeTe/Ga2STe lateral heterostructure reaches a competitive 21%. Thus, the high conversion efficiency and suitable direct bang gap as well as the perfect band alignment may make the In2SeTe/Ga2STe lateral heterostructure a promising material for optoelectronics devices.
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页数:8
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共 51 条
  • [1] Stacking impact on the optical and electronic properties of two-dimensional MoSe2/PtS2 heterostructures formed by PtS2 and MoSe2 monolayers
    Almayyali, Ali Obies Muhsen
    Kadhim, Bahjat B.
    Jappor, Hamad Rahman
    [J]. CHEMICAL PHYSICS, 2020, 532
  • [2] RETRACTED: Tunable electronic and optical properties of 2D PtS2/MoS2 van der Waals heterostructure (Retracted article. See vol. 139, 2022)
    Almayyali, Ali Obies Muhsen
    Kadhim, Bahjat B.
    Jappor, Hamad Rahman
    [J]. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2020, 118
  • [3] ANDERS C, 2019, ACS NANO, V13, P13354
  • [4] The Janus structures of group-III chalcogenide monolayers as promising photocatalysts for water splitting
    Bai, Yujie
    Zhang, Qinfang
    Xu, Ning
    Deng, Kaiming
    Kan, Erjun
    [J]. APPLIED SURFACE SCIENCE, 2019, 478 : 522 - 531
  • [5] Tunable optical and electronic properties of Janus monolayers Ga2SSe, Ga2STe, and Ga2SeTe as promising candidates for ultraviolet photodetectors applications
    Bui, Hoi D.
    Jappor, Hamad Rahman
    Hieu, Nguyen N.
    [J]. SUPERLATTICES AND MICROSTRUCTURES, 2019, 125 : 1 - 7
  • [6] Progress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene
    Butler, Sheneve Z.
    Hollen, Shawna M.
    Cao, Linyou
    Cui, Yi
    Gupta, Jay A.
    Gutierrez, Humberto R.
    Heinz, Tony F.
    Hong, Seung Sae
    Huang, Jiaxing
    Ismach, Ariel F.
    Johnston-Halperin, Ezekiel
    Kuno, Masaru
    Plashnitsa, Vladimir V.
    Robinson, Richard D.
    Ruoff, Rodney S.
    Salahuddin, Sayeef
    Shan, Jie
    Shi, Li
    Spencer, Michael G.
    Terrones, Mauricio
    Windl, Wolfgang
    Goldberger, Joshua E.
    [J]. ACS NANO, 2013, 7 (04) : 2898 - 2926
  • [7] Polarity-Reversed Robust Carrier Mobility in Monolayer MoS2 Nanoribbons
    Cai, Yongqing
    Zhang, Gang
    Zhang, Yong-Wei
    [J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2014, 136 (17) : 6269 - 6275
  • [8] The electronic properties of graphene
    Castro Neto, A. H.
    Guinea, F.
    Peres, N. M. R.
    Novoselov, K. S.
    Geim, A. K.
    [J]. REVIEWS OF MODERN PHYSICS, 2009, 81 (01) : 109 - 162
  • [9] Influential Electronic and Magnetic Properties of the Gallium Sulfide Monolayer by Substitutional Doping
    Chen, Hui
    Li, Yan
    Huang, Le
    Li, Jingbo
    [J]. JOURNAL OF PHYSICAL CHEMISTRY C, 2015, 119 (52) : 29148 - 29156
  • [10] Two-Dimensional Janus Transition Metal Oxides and Chalcogenides: Multifunctional Properties for Photocatalysts, Electronics, and Energy Conversion
    Chen, Wenzhou
    Hou, Xianhua
    Shi, Xingqiang
    Pan, Hui
    [J]. ACS APPLIED MATERIALS & INTERFACES, 2018, 10 (41) : 35289 - 35295