Structure and chemical states of highly eptiaxial CeO2(001) films grown on SrTiO3 substrate by laser molecular beam epitaxy

被引:6
|
作者
Zhang Jun [1 ]
Wei Feng [1 ]
Yang Zhimin [1 ]
Chen Qiuyun [2 ]
Chen Jun [2 ]
Wang Shuming [3 ]
机构
[1] Gen Res Inst Nonferrous Met, Adv Elect Mat Inst, Beijing 100088, Peoples R China
[2] Sci & Technol Surface Phys & Chem Lab, Mianyang 621907, Peoples R China
[3] Gen Res Inst Nonferrous Met, Natl Ctr Anal & Testing Nonferrous Met & Elect Ma, Beijing 100088, Peoples R China
基金
中国国家自然科学基金;
关键词
laser molecular beam epitaxy; CeO2; thin film; oxygen vacancies; rare earths; THIN-FILMS; CEO2; DEPOSITION; LAYER;
D O I
10.1016/S1002-0721(12)60425-6
中图分类号
O69 [应用化学];
学科分类号
081704 ;
摘要
Highly epitaxial and pure (001)-oriented CeO2 films were grown on SrTiO3(001) substrates by laser molecular beam epitaxy method without any gas ambient. Layer-by-layer epitaxial growth mode of CeO2 was confirmed by in situ reflection high-energy electron diffraction (RHEED) observations. High-resolution X-ray diffraction (HRXRD) and high-resolution transmission electron microscopy (HRTEM) results indicated the STO(100)//CeO2(100), STO[100]//CeO2[110] epitaxial relationship for out-of-plane and in-plane, respectively. The formation mechanism of the epitaxial film was also discussed in the light of a theoretical model. Chemical states of the LMBE ceria films were evaluated and evidences for the existence of Ce3+ and oxygen vacancies were presented.
引用
收藏
页码:1191 / 1194
页数:4
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