Time-resolved luminescence studies of proton-implanted GaN

被引：38

作者：

Pinos, A. ^{[1
]}

Marcinkevicius, S. ^{[1
]}

Usman, M. ^{[1
]}

Hallen, A. ^{[1
]}

机构：

[1] Royal Inst Technol, Sch Informat & Commun Technol, S-16440 Kista, Sweden

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 11期

基金：

瑞典研究理事会;

关键词：

N-TYPE GAN; DEFECTS; RECOMBINATION; DISLOCATIONS; ACCEPTORS; ELECTRON;

D O I：

10.1063/1.3226108

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Time-resolved photoluminescence measurements performed on proton implanted and annealed GaN layers have shown that carrier lifetime can be tuned over two orders of magnitude and, at implantation dose of 1 x 10(15) cm(-2), decreases down to a few picoseconds. With annealing at temperatures between 250 and 750 degrees C, carrier lifetime, contrary to electrical characteristics, is only slightly restored, indicating that electrical compensation and carrier dynamics are governed by different defects. Ga vacancies, free and bound at threading dislocations, are suggested as the most probable defects, responsible for electrical compensation and carrier lifetime quenching. (C) 2009 American Institute of Physics. [doi: 10.1063/1.3226108]

引用

页数：3

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