GaN-on-diamond electronic device reliability: Mechanical and thermo-mechanical integrity

被引：26

作者：

Liu, Dong ^{[1
,2
]}

Sun, Huarui ^{[1
]}

Pomeroy, James W. ^{[1
]}

Francis, Daniel ^{[3
]}

Faili, Firooz ^{[3
]}

Twitchen, Daniel J. ^{[3
]}

Kuball, Martin ^{[1
]}

机构：

[1] Univ Bristol, HH Wills Phys Lab, Ctr Device Thermog & Reliabil, Tyndall Ave, Bristol BS8 1TL, Avon, England

[2] Univ Bristol, HH Wills Phys Lab, Interface Anal Ctr, Tyndall Ave, Bristol BS8 1TL, Avon, England

[3] Element Six Technol, Santa Clara, CA 95054 USA

来源：

APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 25期

关键词：

THERMAL-BOUNDARY RESISTANCE; ALGAN/GAN HEMTS; THIN-FILMS; ALN;

D O I：

10.1063/1.4938002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The mechanical and thermo-mechanical integrity of GaN-on-diamond wafers used for ultra-high power microwave electronic devices was studied using a micro-pillar based in situ mechanical testing approach combined with an optical investigation of the stress and heat transfer across interfaces. We find the GaN/ diamond interface to be thermo-mechanically stable, illustrating the potential for this material for reliable GaN electronic devices. (C) 2015 AIP Publishing LLC.

引用

页数：4

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