Evaporation-glow discharge hybrid source for plasma immersion ion implantation

被引：14
作者：
Li, LH
Fu, RKY
Poon, RWY
Kwok, SCH
Chu, PK
Wu, YQ
Zhang, YH
Cai, X
Chen, QL
Xu, M
机构：
[1] City Univ Hong Kong, Dept Phys & Mat Sci, Kowloon, Hong Kong, Peoples R China
[2] Shanghai Jiao Tong Univ, Sch Mat Sci & Engn, Shanghai 200030, Peoples R China
[3] Beijing Univ Aeronaut & Astronaut, Sch Mech Engn, Dept Mat Proc & Controlling, Beijing, Peoples R China
来源：
SURFACE & COATINGS TECHNOLOGY | 2004年 / 186卷 / 1-2期
基金：
中国国家自然科学基金;
关键词：
plasma immersion ion implantation; sulfur; glow discharge;
D O I：
10.1016/j.surfcoat.2004.04.025
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The plasma ion sources play a very important role in the plasma immersion ion implantation (PIII) process. In this paper, we report on our newly designed evaporation-glow discharge hybrid ion source for PIII. The high negative substrate bias not only acts as the plasma producer but also provides the implantation voltage. The sulfur vapor gas glow discharge shows that the electrons in the plasma are focused to the orifice of the inlet tube, thereby helping the ionization of the fleeing vapor gases. The sulfur depth profile confirms that this evaporation-glow discharge hybrid source is effective for materials with a low melting point and high vapor pressure. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：165 / 169
页数：5
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