All Chemical Vapor Deposition Synthesis and Intrinsic Bandgap Observation of MoS2/Graphene Heterostructures

被引:141
作者
Shi, Jianping [1 ,2 ]
Liu, Mengxi [2 ,3 ]
Wen, Jinxiu [4 ]
Ren, Xibiao [5 ]
Zhou, Xiebo [1 ,2 ]
Ji, Qingqing [2 ]
Ma, Donglin [2 ]
Zhang, Yu [1 ,2 ]
Jin, Chuanhong [5 ]
Chen, Huanjun [4 ]
Deng, Shaozhi [4 ]
Xu, Ningsheng [4 ]
Liu, Zhongfan [2 ]
Zhang, Yanfeng [1 ,2 ]
机构
[1] Peking Univ, Coll Engn, Dept Mat Sci & Engn, Beijing 100871, Peoples R China
[2] Peking Univ, Coll Chem & Mol Engn, Beijing Natl Lab Mol Sci, Beijing Sci & Engn Ctr Nanocarbons,Ctr Nanochem C, Beijing 100871, Peoples R China
[3] Chinese Acad Sci, Natl Ctr Nanosci & Technol, Beijing 100190, Peoples R China
[4] Sun Yat Sen Univ, Sch Phys & Engn, State Key Lab Optoelect Mat & Technol, Guangdong Prov Key Lab Display Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
[5] Zhejiang Univ, Sch Mat Sci & Engn, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
基金
中国国家自然科学基金;
关键词
DER-WAALS EPITAXY; MONO LAYER MOS2; HIGH-QUALITY; AU FOILS; GROWTH; GRAPHENE; DEFECTS; STATES; FILMS; GAP;
D O I
10.1002/adma.201503342
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
A facile all-chemical vapor deposition approach is designed, which allows both sequentially grown Gr and monolayer MoS2 in the same growth process, thus allowing the direct construction of MoS2/Gr vertical heterostructures on Au foils. A weak n-doping effect and an intrinsic bandgap of MoS2 are obtained from MoS2/Gr/Au via scanning tunneling microscopy and spectroscopy characterization. The exciton binding energy is accurately deduced by combining photoluminescence measurements.
引用
收藏
页码:7086 / +
页数:8
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