Electron dynamics at GaAs-AlGaAs heterojunction studied by ultrafast spectroscopy

In this letter the electron and spin dynamics at GaAs/AlGaAs heterojunction was studied by ultrafast spectroscopy techniques (photon echo and transient grating studies). Relaxation times and diffusion coefficients of photoexcited electrons and spins were obtained using pure optical setup. The estimated spin diffusion coefficient value of 160 cm(2)/s is relatively high and comparable to the electron diffusion coefficient of 200 cm(2)/s. This feature makes GaAs/AlGaAs heterosructure a promising material for practical application in semiconductor spintronics.