The effect of nitrogen implantation on structural changes in semi-insulating GaAs

被引：5
作者：
Jayavel, P
Santhakumar, K
Rajagopalan, S
Sastry, VS
Balamurugan, K
Nair, KGM
机构：
[1] Natl Inst Adv Ind Sci & Technol, Photon Res Inst, Tsukuba, Ibaraki 3058568, Japan
[2] Indira Gandhi Ctr Atom Res, Div Mat Sci, Kalpakkam 603102, Tamil Nadu, India
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2002年 / 94卷 / 01期
关键词：
ion implantation; fluence; GIXRD; SIMS;
D O I：
10.1016/S0921-5107(02)00086-7
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Nitrogen ions (N+, 120 keV) of fluences 1 X 10(14)-1 X 10(17) cm(-2) have been implanted in liquid encapsulated Czochralski (LEC) grown undoped Serni-Insulating (SI) Gallium Arsenide (GaAs) single crystal substrates. Grazing incidence X-ray diffraction (GIXRD) and Secondary Ion Mass Spectroscopy (SIMS) measurements on control and implanted samples have been carried out and analyzed. For the fluence 1 X 10(15) cm(-2), the (311) reflection has been separated into primary and secondary maxima due to implantation induced lattice defects. At a higher fluence (1 X 10(17) cm(-2)), an additional reflection (111) has been observed. It is due to the structural deformation of GaAs by the implantation process. It is also observed that the FWHM of the (311) reflection peak increased for ion doses up to 1 X 10(16) cm(-2) and decreased for the fluence of 1 X 10(17) cm(-2). The increase in FWHM is due to strain introduced by the implant. From the SIMS measurements, the atomic distribution of nitrogen (N) has been calculated. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：66 / 70
页数：5
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