Piezoelectric RF MEMS Switches on Si-on-Sapphire Substrates

被引：18

作者：

Benoit, Robert R. ^{[1
]}

Rudy, Ryan Q. ^{[1
]}

Pulskamp, Jeffrey S. ^{[1
]}

Polcawich, Ronald G. ^{[1
]}

机构：

[1] US Army, Res Lab, CCDC, Adelphi, MD 20783 USA

来源：

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS | 2020年 / 29卷 / 05期

关键词：

Radio frequency; Substrates; Micromechanical devices; Silicon; Contacts; Actuators; Insertion loss; iezoelectric; PZT; RF MEMS; RF switch; silicon-on-sapphire;

D O I：

10.1109/JMEMS.2020.3008201

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports the development of piezoelectrically actuated radio frequency (RF) micro-electromechanical systems (MEMS) switches on Si-on-sapphire substrates using a novel greyscale lithography fabrication technique. Lead zirconium titanate (PZT) thin-film actuators are used to close a series ohmic contact single-pole single-throw (SPST) switch implemented in co-planar waveguide (CPW). The switch design on a Si substrate has maximum insertion loss of 2.6 dB from DC - 67 GHz. While over the same frequency span, the switch on a sapphire substrate exhibits insertion loss better than 1.4 dB and isolation better than 15 dB. [2020-0071]

引用

页码：1087 / 1090

页数：4

共 12 条

[1]

Benoit R.R., 2018, IEEE MTT S INT MICRO, P1

[2] Direct-Write Laser Grayscale Lithography for Multilayer Lead Zirconate Titanate Thin Films [J].