Planar Hall effect of the Fe3Si epitaxial films with different in-plane configurations on MgO substrates

被引：8
作者：
Guo, B. L. [1 ]
Li, P. [1 ]
Jin, C. [1 ]
Liu, H. [1 ]
Bai, H. L. [1 ]
机构：
[1] Tianjin Univ, Inst Adv Mat Phys, Tianjin Key Lab Low Dimens Mat Phys & Preparing T, Fac Sci, Tianjin 300072, Peoples R China
来源：
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2014年 / 251卷 / 04期
基金：
美国国家科学基金会;
关键词：
epitaxial films; Heusler alloys; magnetocrystalline anisotropy; planar Hall effect; GROWTH; SI;
D O I：
10.1002/pssb.201349193
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Fe3Si films with (001), (112), and (011) c-axis orientations were grown on MgO(001), (011), and (111) substrates by sputtering, respectively. The epitaxial relationship of the Fe3Si films on MgO was verified by X-ray diffractions (XRDs) with -2 and phi scans. All the planar Hall resistance (PHR) curves of the Fe3Si films with different orientations show a nearly sinusoidal behavior at high fields (H100Oe). When the magnetic field is below 100Oe, the planar Hall effect (PHE) lineshapes of the Fe3Si(001) and Fe3Si(112) films deviate from the sin2(M) function and show abrupt switching patterns. Meanwhile, the curves of PHE of the Fe3Si(011) film show triangle shape. The PHE at high fields can be interpreted by single domain magnetic moments reversal models. The different low-field PHEs in the Fe3Si films were explained by multi-domain magnetic properties and different in-plane epitaxial configurations, which are closely correlated to the relation between the in-plane symmetries of the films and substrates.
引用
收藏
页码：761 / 768
页数：8
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