A New dual directional SCR with high holding voltage for High Voltage ESD protection

被引：14
|
作者：
Song, Shiyu [1 ]
Du, Feibo [1 ]
Hou, Fei [1 ]
Song, Wenqiang [1 ]
Liu, Zhiwei [1 ]
Liu, Jizhi [1 ]
机构：
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrate Device, Chengdu, Sichuan, Peoples R China
来源：
2019 IEEE INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2019年
关键词：
ESD (Electro-Static discharge); DDSCR (dual-directional SCR); high holding voltage; simulation;
D O I：
10.1109/edssc.2019.8754152
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
In this paper, A novel high holding voltage dual directional SCR (HHV-DDSCR) is proposed. The ESD I-V characteristics of HHV-DDSCR and DDSCR (dual-directional SCR) are simulated with the Sentaurus TCAD software. Compared with the DDSCR, the new HHV-DDSCR dramatically increases the holding voltage from 2V to 14V with relatively stable trigger voltage, which can provide efficient ESD protection for high voltage (HV) ICs. Besides, the influence of the parasitic BJTs in HHV-DDSCR on the device performance has also been studied.
引用
收藏
页数：2
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