Compositionally modulated structures studied by in situ scanning tunneling microscopy

被引：0

作者：

Pearson, CA ^{[1
]}

Dorin, C ^{[1
]}

Millunchick, JM ^{[1
]}

Chen, YQ ^{[1
]}

Orr, BG ^{[1
]}

机构：

[1] Univ Michigan, Dept Comp Sci Engn Sci & Phys, Flint, MI 48502 USA

来源：

CURRENT ISSUES IN HETEROEPITAXIAL GROWTH-STRESS RELAXATION AND SELF ASSEMBLY | 2002年 / 696卷

关键词：

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Two different short period superlattice (SPS) structures with nominally equivalent lattice mismatch, InAs/AlAs and InAs/GaAs are examined using in situ scanning tunneling microscopy (STM). Depending upon the growth conditions, the composition of the InAs/AlAs SPS structure can be either homogeneous or modulated in the lateral direction. Distinct periodic structures are clearly visible in images of the modulated SPS while no periodicity is observed in the homogeneous SPS. For a 30 period SPS consisting of 2 monolayers of AlAs and 2 monolayers of InAs we observe structures 20 nm in size with an average spacing of similar to25 nm in orthogonal directions, which is approximately the same length scale as the composition modulation. Despite the nominally equivalent lattice mismatch, the InAs/GaAs SPS structures are quite different. Some degree of modulation is always observed in these structures. Homogeneous structures are not observed. For the modulated SPS structures, scanning tunneling spectroscopy can be used to characterize the chemical profile.

引用

页码：247 / 251

页数：5

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