Gas-phase and surface kinetics of epitaxial silicon carbide growth involving chlorine-containing species

被引：54
|
作者：
Veneroni, Alessandro [1 ]
Masi, Maurizio [1 ]
机构：
[1] Politecn Milan, Dipartimento Chim Mat & Ingn Chim Giulio Natta, I-20131 Milan, Italy
来源：
CHEMICAL VAPOR DEPOSITION | 2006年 / 12卷 / 8-9期
关键词：
deposition mechanism; detailed chemical kinetics; epitaxial growth; reactor modeling; silicon carbide;
D O I：
10.1002/cvde.200606468
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
A detailed chemical mechanism for the silicon carbide epitaxial growth using light hydrocarbons, silane, and either chlorosilanes and/or HCl as the chlorine source is presented. The mechanism involves 153 gas-phase and 76 surface reactions among 47 gas-phase and 9 surface species, respectively. A comparison with the performances of the standard process using silane-hydrocarbons is presented, and the observed growth rate increase and the disappearing of the homogeneous silicon droplets in gas phase is explained.
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页码：562 / 568
页数：7
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