Study of tetracene thin film transistors using La2O3 as gate insulator

被引：0
|
作者：
Sarma, R. [1 ]
Saikia, D. [1 ]
机构：
[1] JB Coll, Thin Film Lab, Dept Phys, Jorhat, Assam, India
来源：
INDIAN JOURNAL OF PURE & APPLIED PHYSICS | 2009年 / 47卷 / 12期
关键词：
Organic thin film transistors; Tetracene; Gate insulator; Hole concentration; Interface traps; CIRCUITS; DEVICES;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Tetracene organic field-effect transistors (OFET) have been fabricated and investigated with La2O3 as gate insulator. The fabricated organic thin film transistors exhibit p-type conductivity with field effect mobility 1.04x10(-4) cm(2)/V.s, ON-OFF ratio 3.465, sub-threshold swing 17.8 mV/decade and hole concentration 1.25x10(19) cm(-3). The SEM and XRD analysis on the semiconductor film were have also been reported.
引用
收藏
页码：876 / 879
页数：4
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