Study of tetracene thin film transistors using La2O3 as gate insulator

被引：0

作者：

Sarma, R. ^{[1
]}

Saikia, D. ^{[1
]}

机构：

[1] JB Coll, Thin Film Lab, Dept Phys, Jorhat, Assam, India

来源：

INDIAN JOURNAL OF PURE & APPLIED PHYSICS | 2009年 / 47卷 / 12期

关键词：

Organic thin film transistors; Tetracene; Gate insulator; Hole concentration; Interface traps; CIRCUITS; DEVICES;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Tetracene organic field-effect transistors (OFET) have been fabricated and investigated with La2O3 as gate insulator. The fabricated organic thin film transistors exhibit p-type conductivity with field effect mobility 1.04x10(-4) cm(2)/V.s, ON-OFF ratio 3.465, sub-threshold swing 17.8 mV/decade and hole concentration 1.25x10(19) cm(-3). The SEM and XRD analysis on the semiconductor film were have also been reported.

引用

页码：876 / 879

页数：4

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