Study of tetracene thin film transistors using La2O3 as gate insulator

被引：0

作者：

Sarma, R. ^{[1
]}

Saikia, D. ^{[1
]}

机构：

[1] JB Coll, Thin Film Lab, Dept Phys, Jorhat, Assam, India

来源：

INDIAN JOURNAL OF PURE & APPLIED PHYSICS | 2009年 / 47卷 / 12期

关键词：

Organic thin film transistors; Tetracene; Gate insulator; Hole concentration; Interface traps; CIRCUITS; DEVICES;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Tetracene organic field-effect transistors (OFET) have been fabricated and investigated with La2O3 as gate insulator. The fabricated organic thin film transistors exhibit p-type conductivity with field effect mobility 1.04x10(-4) cm(2)/V.s, ON-OFF ratio 3.465, sub-threshold swing 17.8 mV/decade and hole concentration 1.25x10(19) cm(-3). The SEM and XRD analysis on the semiconductor film were have also been reported.

引用

页码：876 / 879

页数：4

共 50 条

[1] Pentacene thin film transistors using La2O3 as gate insulator
Sarma, R.
Saikia, D.
Konwar, K.
Baishya, B.
INDIAN JOURNAL OF PHYSICS, 2010, 84 (05) : 547 - 552
[2] Pentacene thin film transistors using La2O3 as gate insulator
R. Sarma
D. Saikia
K. Konwar
B. Baishya
Indian Journal of Physics, 2010, 84 : 547 - 552
[3] Pentacene based Thin Film Transistors with High-k Dielectric Nd2O3 as a Gate Insulator
Sarrna, R.
Saikia, D.
Saikia, Puja
Saikia, P. K.
Baishya, B.
BRAZILIAN JOURNAL OF PHYSICS, 2010, 40 (03) : 357 - 360
[4] The influence of SiO2 and Al2O3 gate insulator to the performance of In-Ga-Zn-O thin film transistors
Ding, Xingwei
Shi, Weimin
Zhang, Jianhua
Zhang, Hao
Li, Jun
Jiang, Xueyin
Zhang, Zhilin
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2014, 8 (7-8): : 659 - 662
[5] All-organic thin-film transistors using photoacryl as a gate insulator
Kim, YM
Pyo, SW
Kim, YS
Shim, JH
Suh, CH
Kim, YK
OPTICAL MATERIALS, 2003, 21 (1-3) : 425 - 428
[6] A photosensitive copolymer for the gate insulator of organic thin-film transistors
Xuehui Zhang
He Wang
Lei Wang
Zhanchen Cui
Donghang Yan
Applied Physics A, 2010, 99 : 85 - 91
[7] Low threshold voltage pentacene OTFTs with La2O3 gate insulating layer using TSD
Saikia, Prasanta Kumar
Mahanta, U. J.
Saikia, Puja
Baishya, B.
Sarma, Ranjit
Saikia, Dipok
CHIANG MAI JOURNAL OF SCIENCE, 2012, 39 (02): : 263 - 269
[8] The Influence of New SiNx Gate Insulator in a-InGaZnO Thin Film Transistors
Yamazaki, Haruka
Ishikawa, Yasuaki
Ueoka, Yoshihiro
Fujiwara, Masaki
Takahashi, Eiji
Andoh, Yasunori
Uraoka, Yukiharu
IDW/AD '12: PROCEEDINGS OF THE INTERNATIONAL DISPLAY WORKSHOPS, PT 2, 2012, 19 : 843 - 846
[9] The Influence of fluorinated SiNx Gate Insulator in a-InGaZnO Thin Film Transistors
Yamazaki, Haruka
Ishikawa, Yasuaki
Ueoka, Yoshihiro
Fujiwara, Masaki
Takahashi, Eiji
Andoh, Yasunori
Uraoka, Yukiharu
PROCEEDINGS OF 2013 TWENTIETH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD 13): TFT TECHNOLOGIES AND FPD MATERIALS, 2013, : 43 - 46
[10] EFFECTS OF SURFACE-MODIFIED GATE INSULATOR ON THE ELECTRICAL CHARACTERISTICS OF ORGANIC THIN-FILM TRANSISTORS
Zhu Wenqing
Chen Ling
Liu Xiang
Bai Yu
Wei Bin
Jiang Xueyin
Zhang Zhilin
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2011, 25 (01): : 91 - 99

← 1 2 3 4 5 →