Enhancement of photoluminescence intensity and structural change by doping of P5+ ion for Ca2-x/2(Si1-xPx)O4:Eu2+ green phosphor

被引:11
作者
Furuya, Shohei [1 ]
Nakano, Hiromi [1 ]
Yokoyama, Nobuyuki [1 ]
Banno, Hiroki [2 ,3 ]
Fukuda, Koichiro [2 ]
机构
[1] Toyohashi Univ Technol, Dept Environm & Life Sci, Toyohashi, Aichi 4418580, Japan
[2] Nagoya Inst Technol, Dept Mat Sci & Engn, Nagoya, Aichi 4668555, Japan
[3] Japan Soc Promot Sci, Tokyo, Japan
基金
日本学术振兴会;
关键词
Oxide materials; Solid state reactions; Optical properties; Crystal structure; X-ray diffraction; DOPED DICALCIUM SILICATES; POWDER-DIFFRACTION; EMITTING PHOSPHOR; LUMINESCENCE;
D O I
10.1016/j.jallcom.2015.10.172
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The study of P-doped Ca2SiO4 (C2S) structure has demonstrated that the incorporation of P effectively stabilizes the high-temperature phases. In this work, we synthesize a series of (Ca2-x/2-yEuy square(x/2)) (Si1-xPx)O-4 (0 <= x <= 0.20, 0.02 <= y <= 0.05) green-light emitting phosphors and discuss the influence of P concentration on the luminescence intensity and structural change of the host material. The phosphor is synthesized by a solid-state reaction and heated at 498 K for 6 h, and then at 1273 K for 8 h in air. Doping of Eu2+ is achieved by annealing the Eu2O3-containing materials at 1473 K for 3 h under a 90% N-2-10% H-2 reductive atmosphere. A phosphor with x = 0.04 and y = 0.03 shows the highest PL intensity, which is obviously higher than that of the P-free phosphor (x = 0) due to the structural change of the host material. (C) 2015 Elsevier B.V. All rights reserved.
引用
收藏
页码:147 / 151
页数:5
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