Memory Metamaterials

被引:792
作者
Driscoll, T. [1 ]
Kim, Hyun-Tak [2 ]
Chae, Byung-Gyu [2 ]
Kim, Bong-Jun [2 ]
Lee, Yong-Wook [2 ,3 ]
Jokerst, N. Marie [4 ,5 ]
Palit, S. [4 ,5 ]
Smith, D. R. [4 ,5 ]
Di Ventra, M. [1 ]
Basov, D. N. [1 ]
机构
[1] Univ Calif San Diego, Dept Phys, La Jolla, CA 92093 USA
[2] ETRI, Met Insulator Transit Lab, Taejon 305350, South Korea
[3] Pukyong Natl Univ, Sch Elect & Engn, Pusan 608739, South Korea
[4] Duke Univ, Ctr Metamat & Integrated Plasmon, Durham, NC 27708 USA
[5] Duke Univ, Dept Elect & Comp Engn, Durham, NC 27708 USA
关键词
METAL-INSULATOR-TRANSITION; MOTT TRANSITION; MECHANISM;
D O I
10.1126/science.1176580
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The resonant elements that grant metamaterials their distinct properties have the fundamental limitation of restricting their useable frequency bandwidth. The development of frequency-agile metamaterials has helped to alleviate these bandwidth restrictions by allowing real-time tuning of the metamaterial frequency response. We demonstrate electrically controlled persistent frequency tuning of a metamaterial, which allows the lasting modification of its response by using a transient stimulus. This work demonstrates a form of memory capacitance that interfaces metamaterials with a class of devices known collectively as memory devices.
引用
收藏
页码:1518 / 1521
页数:4
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