Photoluminescence study of nitrogen effects on confined states in GaAs1-xNx/GaAs quantum wells

被引：8
作者：
Dhifallah, I. [1 ]
Aloulou, S. [1 ]
Bardaoui, A. [1 ]
Harmand, J. C. [2 ]
Chtourou, R. [1 ]
机构：
[1] Ctr Rech & Technol Energie, Lab Photovolta Semicond & Nanostruct, Hammam Lif 2050, Tunisia
[2] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France
来源：
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS | 2009年 / 47卷 / 03期
关键词：
BAND-GAP ENERGY; GAASN/GAAS EPILAYERS; DOPED GAAS; HETEROSTRUCTURES; SEMICONDUCTORS; MOVPE;
D O I：
10.1051/epjap/2009107
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Modulation doped heterostructures GaAs/GaAs1-xNx/GaAs/Al0.3Ga0.7As:delta Si with GaAs1-xNx Quantum Wells (QW) with different nitrogen contents x have been grown by molecular beam epitaxy and investigated by photoluminescence (PL) spectroscopy. We have found that at low temperature the photoluminescence spectra are essentially formed by two structures observed at 1.51 eV and 1.47 eV attributed to excitonic transitions in GaAs layer, and in GaAs1-xNx QW, respectively. The Band Anticrossing Model (BAC) has been adopted in order to confirm the nature of the transitions in GaAs1-xNx QW's. The band structure of delta-doped GaAs/GaAs1-xNx/GaAs/Al0.3Ga0.7As:delta Si has been studied theoretically by using the finite differences method to self-consistently and simultaneously solve Schrodinger and Poisson equations written within the Hartree approximation. We find in this way good agreement between our measured and our calculated values for the transition energies in our GaAs1-xNx QW's.
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页数：6
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共 21 条
[1]   Photoluminescence studies of confined states in AlGaAs/GaAs asymmetric quantum well [J].
Ajlani, H. ;
Meftah, A. ;
Chtourou, R. ;
Oueslati, M. ;
Maaref, H. .
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2006, 33 (02) :325-330
[2]   Electron confinement in planar-doped heterostructures AlxGa1-xAs:δSi/GaAs [J].
Aloulou, S ;
Ajlani, H ;
Meftah, A ;
Oueslati, M ;
Sfaxi, L ;
Maaref, H .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 96 (01) :14-18
[3]   Band gap energy, nitrogen localized states and GaN-like phonon in heavily doped GaAsN grown by molecular beam epitaxy [J].
Ben Bouzid, S ;
Bousbih, F ;
Chtourou, R ;
Tounié, E .
SOLID STATE COMMUNICATIONS, 2004, 130 (1-2) :121-124
[4]   Effect of nitrogen in the electronic structure of GaAsN and GaAsSb(N) compounds [J].
Bousbih, F ;
Ben Bouzid, S ;
Chtourou, R ;
Charfi, FF ;
Harmand, JC ;
Ungaro, G .
MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2002, 21 (1-2) :251-254
[5]   Radiative N-localized recombination and confinement in GaAsN/GaAs epilayers and quantum well structures [J].
Dumont, H ;
Auvray, L ;
Monteil, Y ;
Saidi, F ;
Hassen, F ;
Maaref, H .
OPTICAL MATERIALS, 2003, 24 (1-2) :303-308
[6]   Photoluminescence study of the nitrogen content effect on GaAs/GaAs1-xNx/GaAs/AlGaAs:(Si) quantum well [J].
Hamdouni, A. ;
Bousbih, F. ;
Ben bouzid, S. ;
Aloulou, S. ;
Harmand, J. C. ;
Chtourou, R. .
MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 2008, 28 (5-6) :816-819
[7]   Subband electron properties of modulation-doped AlxGa1-xN/GaN heterostructures with different barrier thicknesses [J].
Jiang, CP ;
Guo, SL ;
Huang, ZM ;
Yu, J ;
Gui, YS ;
Zheng, GZ ;
Chu, JH ;
Zheng, ZW ;
Shen, B ;
Zheng, YD .
APPLIED PHYSICS LETTERS, 2001, 79 (03) :374-376
[8]   GAS-SOURCE MOLECULAR-BEAM EPITAXY OF GANXAS1-X USING A N RADICAL AS THE N-SOURCE [J].
KONDOW, M ;
UOMI, K ;
HOSOMI, K ;
MOZUME, T .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1994, 33 (8A) :L1056-L1058
[9]   RAMAN-SCATTERING FROM ELECTRONIC EXCITATIONS IN PERIODICALLY DELTA-DOPED GAAS [J].
MACIEL, AC ;
TATHAM, M ;
RYAN, JF ;
WORLOCK, JM ;
NAHORY, RE ;
HARBISON, JP ;
FLOREZ, LT .
SURFACE SCIENCE, 1990, 228 (1-3) :251-254
[10]   Origin of nitrogen-pair luminescence in GaAs studied by nitrogen atomic-layer-doping in MOVPE [J].
Makimoto, T ;
Saito, H ;
Kobayashi, N .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1997, 36 (3B) :1694-1697
123