Evolution of surface morphology and photoluminescence characteristics of 1.3-μm In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy

被引：2
|
作者：
Wei, Quanxiang [1 ]
Ren, Zhengwei [2 ]
He, Zhenhong [2 ]
Niu, Zhichuan [2 ]
机构：
[1] Shanxi Univ, Dept Phys, Taiyuan 030006, Peoples R China
[2] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
来源：
CHINESE OPTICS LETTERS | 2009年 / 7卷 / 01期
基金：
中国国家自然科学基金;
关键词：
MU-M PHOTOLUMINESCENCE; ROOM-TEMPERATURE; OPTICAL-PROPERTIES; CAP LAYER;
D O I：
10.3788/COL20090701.0052
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Evolution of surface morphology and optical characteristics of 1.3-mu m In0.5Ga0.5As/GaAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) are investigated by atomic force microscopy (AFM) and photoluminescence (PL). After deposition of 16 monolayers (ML) of In0.5Ga0.5As, QDs are formed and elongated along the [110] direction when using sub-ML depositions, while large size InGaAs QDs with better uniformity are formed when using ML or super-ML depositions. It is also found that the larger size QDs show enhanced PL efficiency without optical nonlinearity, which is in contrast to the elongated QDs.
引用
收藏
页码：52 / 55
页数：4
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