Performance of Blue LEDs With N-AlGaN/N-GaN Superlattice as Electron-Blocking Layer

被引：8

作者：

Yu, Xiaopeng ^{[1
]}

Fan, Guanghan ^{[1
]}

Zheng, Shuwen ^{[1
]}

Ding, Binbin ^{[1
]}

Zhang, Tao ^{[1
]}

机构：

[1] S China Normal Univ, Inst Optoelect Mat & Technol, Lab Nanophoton Funct Mat & Device, Guangzhou 510631, Guangdong, Peoples R China

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2014年 / 26卷 / 11期

基金：

中国国家自然科学基金;

关键词：

Electron-blocking layer; AlGaN/GaN superlattice (SL); efficiency droop; QUANTUM EFFICIENCY; INGAN;

D O I：

10.1109/LPT.2014.2316546

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The characteristics of InGaN-based blue light-emitting diodes (LEDs) with an AlGaN/GaN superlattice (SL) electron-blocking layer (EBL) of gradual Al molar fraction below the active region are analyzed numerically. The output power, internal quantum efficiency, electrostatic fields, energy band diagrams, carrier concentrations, radiative recombination, and electron leakage current are investigated. The results indicate that the LED with n-type AlGaN/GaN SL EBL of gradual Al molar fraction has smaller electrostatic fields and lower electron leakage in its active region than the LED with a rectangular p-AlGaN EBL or n-AlGaN EBL. These result in a markedly reduced efficiency droop.

引用

页码：1132 / 1135

页数：4

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