Influence of trivalent (Bi, Sb) metal ions on the photosensitivity of doped Cu2Se thin films

被引：3

作者：

Sudha, A. P. ^{[1
]}

Prema, P. ^{[2
]}

Henry, J. ^{[2
]}

Mohanraj, K. ^{[2
]}

Sivakumar, G. ^{[3
]}

机构：

[1] Vellalar Coll Women Autonomous, Dept Phys, Thindal 638012, Erode, India

[2] Manonmaniam Sundaranar Univ, Dept Phys, Tirunelveli 627012, Tamil Nadu, India

[3] Annamalai Univ, Dept Phys, Centralised Instrumentat & Serv Lab, Chidambaram 608002, Tamil Nadu, India

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2017年 / 28卷 / 09期

关键词：

SELENIDE;

D O I：

10.1007/s10854-016-6322-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this work pure and trivalent (Bi and Sb) ions doped copper selenide (Cu2Se) thin films were prepared by chemical bath deposition. The effect of structural, morphological and optical properties of trivalent doped Cu2Se thin films were analyzed by X-ray diffraction (XRD) patterns, scanning electron microscope (SEM), diffuse reflectance spectroscopy technique. XRD analysis shows the formation of cubic structure of Cu2Se thin film and the trivalent doping slightly suppress the intensity of the polycrystalline peaks with shift in the major peak position. SEM images shows well defined spherical grains population are more over the surface. The homogeneous Cu2Se films formation is witnessed by field emission SEM and transmission electron microscopy analysis. The pure and Bi doped Cu2Se thin films show higher absorption in the visible region than the Sb doped Cu2Se thin films. The band gap is found to be in the range of 1.70-2.33 eV. The Bi doped films shows higher photo sensitivity.

引用

页码：6379 / 6387

页数：9