Determination of Composition and strain Field of Nanostructured Semiconductor Materials.

被引:0
作者
Neumann, W. [1 ]
Kirmse, H. [1 ]
Haeusler, I. [1 ]
Otto, R. [1 ]
Haehnert, I. [1 ]
机构
[1] Humboldt Univ, Inst Phys, Chair Crystallog, D-12489 Berlin, Germany
来源
ACTA CRYSTALLOGRAPHICA A-FOUNDATION AND ADVANCES | 2004年 / 60卷
关键词
Semiconductors; Quantum Structures; Transmission Electron Microscopy;
D O I
10.1107/S0108767304098514
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
s8.m28.o1
引用
收藏
页码:S75 / S75
页数:1
相关论文
共 4 条
[1]   Electron microscopy of nanostructured semiconductor materials [J].
Neumann, W .
MATERIALS CHEMISTRY AND PHYSICS, 2003, 81 (2-3) :364-367
[2]  
Rosenauer A, 1996, OPTIK, V102, P63
[3]   Composition evaluation by lattice fringe analysis [J].
Rosenauer, A ;
Fischer, U ;
Gerthsen, D ;
Förster, A .
ULTRAMICROSCOPY, 1998, 72 (3-4) :121-133
[4]   Direct compositional analysis of AlGaAs/GaAs heterostructures by the reciprocal space segmentation of high-resolution micrographs [J].
Tillmann, K ;
Luysberg, A ;
Specht, P ;
Weber, ER .
ULTRAMICROSCOPY, 2002, 93 (02) :123-137