Nature of electron trap states under inversion at In0.53Ga0.47As/Al2O3 interfaces

被引：1

作者：

Colleoni, Davide ^{[1
]}

Pourtois, Geoffrey ^{[2
]}

Pasquarello, Alfredo ^{[1
]}

机构：

[1] Ecole Polytech Fed Lausanne, CSEA, CH-1015 Lausanne, Switzerland

[2] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

来源：

APPLIED PHYSICS LETTERS | 2017年 / 110卷 / 11期

基金：

瑞士国家科学基金会;

关键词：

ATOMIC-LAYER-DEPOSITION; 1ST-PRINCIPLES CALCULATIONS; BAND; DEFECTS; OXIDE; GAP;

D O I：

10.1063/1.4977980

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In and Ga impurities substitutional to Al in the oxide layer resulting from diffusion out of the substrate are identified as candidates for electron traps under inversion at In0.53Ga0.47As/Al2O3 interfaces. Through density-functional calculations, these defects are found to be thermodynamically stable in amorphous Al2O3 and to be able to capture two electrons in a dangling bond upon breaking bonds with neighboring O atoms. Through a band alignment based on hybrid functional calculations, it is inferred that the corresponding defect levels lie at similar to 1 eV above the conduction band minimum of In0.53Ga0.47As, in agreement with measured defect densities. These results support the technological importance of avoiding cation diffusion into the oxide layer. Published by AIP Publishing.

引用

页数：4

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