Coincident Electron Channeling and Cathodoluminescence Studies of Threading Dislocations in GaN

被引：28

作者：

Naresh-Kumar, Gunasekar ^{[1
]}

Bruckbauer, Jochen ^{[1
]}

Edwards, Paul R. ^{[1
]}

Kraeusel, Simon ^{[1
]}

Hourahine, Ben ^{[1
]}

Martin, Robert W. ^{[1
]}

Kappers, Menno J. ^{[2
]}

Moram, Michelle A. ^{[2
,3
]}

Lovelock, Stephen ^{[2
]}

Oliver, Rachel A. ^{[2
]}

Humphreys, Colin J. ^{[2
]}

Trager-Cowan, Carol ^{[1
]}

机构：

[1] Univ Strathclyde, Dept Phys, SUPA, Glasgow G4 0NG, Lanark, Scotland

[2] Univ Cambridge, Dept Mat Sci & Met, Cambridge CB2 3QZ, England

[3] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2AZ, England

来源：

MICROSCOPY AND MICROANALYSIS | 2014年 / 20卷 / 01期

基金：

英国工程与自然科学研究理事会;

关键词：

electron channeling; cathodoluminescence; SEM; diffraction; spectroscopy; nitrides; dislocations; SCREW DISLOCATIONS; EDGE DISLOCATION; MICROSCOPY; EFFICIENCY;

D O I：

10.1017/S1431927613013755

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We combine two scanning electron microscopy techniques to investigate the influence of dislocations on the light emission from nitride semiconductors. Combining electron channeling contrast imaging and cathodoluminescence imaging enables both the structural and luminescence properties of a sample to be investigated without structural damage to the sample. The electron channeling contrast image is very sensitive to distortions of the crystal lattice, resulting in individual threading dislocations appearing as spots with black-white contrast. Dislocations giving rise to nonradiative recombination are observed as black spots in the cathodoluminescence image. Comparison of the images from exactly the same micron-scale region of a sample demonstrates a one-to-one correlation between the presence of single threading dislocations and resolved dark spots in the cathodoluminescence image. In addition, we have also obtained an atomic force microscopy image from the same region of the sample, which confirms that both pure edge dislocations and those with a screw component (i.e., screw and mixed dislocations) act as nonradiative recombination centers for the Si-doped c-plane GaN thin film investigated.

引用

页码：55 / 60

页数：6

共 38 条

[21] The Use of Spatial Analysis Techniques in Defect and Nanostructure Studies [J].

Moram, M. A. ;

Gabbai, U. E. ;

Sadler, T. C. ;

Kappers, M. J. ;

Oliver, R. A. .

JOURNAL OF ELECTRONIC MATERIALS, 2010, 39 (06) :656-662

[22] The Spatial Distribution of Threading Dislocations in Gallium Nitride Films [J].

Moram, Michelle A. ;

Oliver, Rachel A. ;

Kappers, Menno ;

Humphreys, Colin J. .

ADVANCED MATERIALS, 2009, 21 (38-39) :3941-+

[23] Rapid Nondestructive Analysis of Threading Dislocations in Wurtzite Materials Using the Scanning Electron Microscope [J].

Naresh-Kumar, G. ;

Hourahine, B. ;

Edwards, P. R. ;

Day, A. P. ;

Winkelmann, A. ;

Wilkinson, A. J. ;

Parbrook, P. J. ;

England, G. ;

Trager-Cowan, C. .

PHYSICAL REVIEW LETTERS, 2012, 108 (13)

[24] Imaging and identifying defects in nitride semiconductor thin films using a scanning electron microscope [J].

Naresh-Kumar, G. ;

Hourahine, B. ;

Vilalta-Clemente, A. ;

Ruterana, P. ;

Gamarra, P. ;

Lacam, C. ;

Tordjman, M. ;

di Forte-Poisson, M. A. ;

Parbrook, P. J. ;

Day, A. P. ;

England, G. ;

Trager-Cowan, C. .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2012, 209 (03) :424-426

[25]

Norman CE, 2000, SOL ST PHEN, V78-79, P19

[26]

Northrup JE, 2002, PHYS REV B, V66, DOI 10.1103/PhysRevB.66.045204

[27] Screw dislocations in GaN: The Ga-filled core model [J].

Northrup, JE .

APPLIED PHYSICS LETTERS, 2001, 78 (16) :2288-2290

[28] Highlighting threading dislocations in MOVPE-grown GaN using an in situ treatment with SiH4 and NH3 [J].

Oliver, RA ;

Kappers, MJ ;

Sumner, J ;

Datta, R ;

Humphreys, CJ .

JOURNAL OF CRYSTAL GROWTH, 2006, 289 (02) :506-514

[29] Insights into the origin of threading dislocations in GaN/Al2O3 from atomic force microscopy [J].

Oliver, Rachel A. ;

Kappers, Menno J. ;

Humphreys, Colin J. .

APPLIED PHYSICS LETTERS, 2006, 89 (01)

[30]

Parish C. M., 2007, ADV IMAG ELECT PHYS, P2

← 1 2 3 4 →