High Mobility Solution-Processed Hafnium Indium Zinc Oxide TFT With an Al-Doped ZrO2 Gate Dielectric

被引：19

作者：

Gao, Yana ^{[1
]}

Li, Xifeng ^{[1
]}

Chen, Longlong ^{[1
]}

Shi, Jifeng ^{[1
]}

Sun, Xiao Wei ^{[1
]}

Zhang, Jianhua ^{[1
]}

机构：

[1] Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 05期

基金：

中国国家自然科学基金;

关键词：

Al-doped ZrO2; amorphrous; high mobility; solution; thin film transistor (TFT); THIN-FILM TRANSISTORS; LOW-TEMPERATURE; INSULATORS;

D O I：

10.1109/LED.2014.2310120

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we report a solution-processed hafnium indium zinc oxide (HIZO) thin-film transistors (TFTs) with an Al-doped ZrO2 (AZO) gate dielectric. The AZO thin films were identified as an amorphous phase up to the annealing temperature of 600 degrees C and had a smooth surface with root-mean-square roughness of <0.35 nm. The relative dielectric constant of AZO thin film annealed at 400 degrees C is 19.67. And HIZO TFTs with AZO gate oxide exhibited a high saturation field-effect mobility of 18.1 cm(2)/Vs, a small subthreshold swing of 0.4 V/decade, and a high ON/OFF ratio of 10(7), which can satisfy the backplate requirements for flat panel displays.

引用

收藏

页码：554 / 556

页数：3

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