Porous Field-Effect Transistors Based on a Semiconductive Metal-Organic Framework

被引：417

作者：

Wu, Guodong ^{[1
]}

Huang, Jiahong ^{[1
,2
]}

Zang, Ying ^{[1
]}

He, Jun ^{[2
]}

Xu, Gang ^{[1
]}

机构：

[1] Chinese Acad Sci, Fujian Inst Res Struct Matter, State Key Lab Struct Chem, Fuzhou 350002, Fujian, Peoples R China

[2] Guangdong Univ Technol, Sch Chem Engn & Light Ind, Guangzhou 510006, Guangdong, Peoples R China

来源：

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2017年 / 139卷 / 04期

基金：

中国国家自然科学基金;

关键词：

ELECTRICAL-CONDUCTIVITY; AMBIPOLAR TRANSPORT; THIN-FILMS; LARGE-AREA; STORAGE; COMPLEX; OXIDE; INFORMATION; ELECTRONICS; INTERFACE;

D O I：

10.1021/jacs.6b08511

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Recently, the emergence of conductive metal organic frameworks (MOFs) has given great prospects for their applications as active materials in electronic devices. In this work, a high-quality, freestanding conductive MOF membrane was prepared by an air liquid interfacial growth method. Accordingly, field-effect transistors (FETs) possessing a crystalline micro porous MOF channel layer were successfully fabricated for the first time. The porous FETs exhibited p-type behavior, distinguishable on/off ratios, and excellent field-effect hole mobilities as high as 48.6 cm(2) V-1 s(-1), which is even comparable to the highest value reported for solution processed organic or inorganic FETs.

引用

页码：1360 / 1363

页数：4

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