Temperature dependence of refractive indices for 4H-and 6H-SiC

被引：23

作者：

Xu, Chunhua ^{[1
]}

Wang, Shunchong ^{[1
]}

Wang, Gang ^{[1
]}

Liang, Jingkui ^{[1
]}

Wang, Shanpeng ^{[2
]}

Bai, Lei ^{[3
]}

Yang, Junwei ^{[1
]}

Chen, Xiaolong ^{[1
,4
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Res & Dev Ctr Funct Crystals, Beijing 100190, Peoples R China

[2] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China

[3] Chinese Acad Sci, Tech Inst Phys & Chem, Ctr Crystal Res & Dev, Beijing 100190, Peoples R China

[4] Collaborat Innovat Ctr Quantum Matter, Beijing, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2014年 / 115卷 / 11期

基金：

中国国家自然科学基金;

关键词：

infrared spectra; refractive index; silicon compounds; thermo-optical effects; visible spectra; wide band gap semiconductors; SILICON-CARBIDE; MEMS;

D O I：

10.1063/1.4868576

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The refractive indices of 4H- and 6H-SiC single crystals at wavelengths of 404.7, 435.8, 480.0, 546.1, 587.5, 643.8, 706.5, 852.1, 1014.0, 1529.6, and 2325.4 nm are carefully measured from 293 to 493 K by the method of minimum deviation. We find that ordinary (no) and extraordinary (ne) refractive indices for both crystals increase with the elevated temperature. The temperature-dependent Sellmeier equations of refractive indices for 4H- and 6H-SiC are obtained and then thermo-optic coefficients (TOCs) are derived. The TOCs diminish very quickly at visible light region and become less dependent in the infrared light region. Such changing trends of TOCs can be explained by single-oscillator approximation. The results may provide the important reference value for designing the optoelectronic and nonlinear optical devices based on SiC.

引用

页数：10

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