Heterostructure "Housler alloy Co2MnSn -: n-InSb":: Emission in the millimeter and submillimeter microwave range

被引：0

作者：

Viglin, NA ^{[1
]}

Osipov, VV ^{[1
]}

Samokhvalov, AA ^{[1
]}

Naumov, SV ^{[1
]}

Borukhovich, AS ^{[1
]}

Denisov, OF ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Met Phys, Ural Div, Sverdlovsk 620219, Russia

来源：

PHYSICS OF LOW-DIMENSIONAL STRUCTURES | 2000年 / 1-2卷

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中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Microwave emission at a contact between Housler alloy Co2MnSn and semiconductor n-InSb has been studied in the millimeter and submillimeter ranges under the passage of current. The results obtained are explained by the injection of polarized charge carriers from Co2MnSn to InSb and creation of a nonequilibrium inverted population of Zeeman levels in InSb.

引用

页码：29 / 36

页数：8

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