Space radiation effects in advanced solar cell materials and devices

被引：0

作者：

Walters, RJ ^{[1
]}

Summers, GP ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

PROGRESS IN SEMICONDUCTOR MATERIALS FOR OPTOELECTRONIC APPLICATIONS | 2002年 / 692卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An investigation of the physical mechanisms governing the response of III-V based solar cells to particle irradiation is presented. The effect of particle irradiation on single and multijunction solar cells is studied through current vs. voltage, spectral response, and deep level transient spectroscopy measurements. The basic radiation response mechanisms are identified, and their effects on the solar cell electrical performance are described. In particular, a detailed analysis of multijunction InxGa1-xP/InyGa1-yAs/Ge devices is presented. The MJ cell response is found to be more strongly affected by the internal cell structure than by the In content.

引用

页码：569 / 580

页数：12

共 13 条

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