First-principles study of band-gap reduction in GaN/GaSb superlattices

被引：6
|
作者：
Ishikawa, M. [1 ]
Nakayama, T. [2 ]
机构：
[1] Yokogawa Elect Corp, Photon Business Headquarters, Kanagawa 2291207, Japan
[2] Chiba Univ, Dept Phys, Inage Ku, Chiba 2638522, Japan
来源：
MICROELECTRONICS JOURNAL | 2009年 / 40卷 / 4-5期
关键词：
GaN; GaSb; Band-gap reduction; ALLOYS;
D O I：
10.1016/j.mejo.2008.11.026
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Electronic structures of N-layer and N-point defect systems in bulk GaSb were studied by the first-principles calculations. It is shown that, though the band-gap reduction occurs in both systems, the origins of band-gap reduction are different between two systems, reflecting the difference of topological connection of N atoms. Crown Copyright (C) 2008 Published by Elsevier Ltd. All rights reserved.
引用
收藏
页码：824 / 826
页数：3
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