Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells

被引：246

作者：

Ryou, Jae-Hyun ^{[1
]}

Yoder, P. Douglas ^{[2
]}

Liu, Jianping

Lochner, Zachary

Kim, Hyunsoo

Choi, Suk

Kim, Hee Jin

Dupuis, Russell D. ^{[1
,3
]}

机构：

[1] Georgia Inst Technol, Ctr Compound Semicond, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[2] Georgia Inst Technol, Sch Elect & Comp Engn, Savannah, GA 31407 USA

[3] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2009年 / 15卷 / 04期

关键词：

Epitaxial growth; LEDs; piezoelectricity; quantum-confined Stark effect (QCSE); quantum wells; semiconductor lasers; LIGHT-EMITTING-DIODES; M-PLANE; HIGH-POWER; OPTICAL-PROPERTIES; PIEZOELECTRIC POLARIZATION; EPITAXIAL-GROWTH; THIN-FILMS; MACROSCOPIC POLARIZATION; ELECTRONIC-PROPERTIES; LOCALIZED EXCITONS;

D O I：

10.1109/JSTQE.2009.2014170

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reviews current technological developments in polarization engineering and the control of the quantum-confined Stark effect (QCSE) for InxGa1-xN-based quantum-well active regions, which are generally employed in visible LEDs for solid-state lighting applications. First, the origin of the QCSE in III-N wurtzite semiconductors is introduced, and polarization-induced internal fields are discussed in order to provide contextual background. Next, the optical and electrical properties of InxGa1-xN-based quantum wells that are affected by the QCSE are described. Finally, several methods for controlling the QCSE of InxGa1-xN-based quantum wells are discussed in the context of performance metrics of visible light emitters, considering both pros and cons. These strategies include doping control, strain/polarization field/electronic band structure control, growth direction control, and crystalline structure control.

引用

页码：1080 / 1091

页数：12

共 118 条

[21] Demonstration of nonpolar m-plane InGaN/GaN light-emitting diodes on free-standing m-plane GaN substrates [J].

Chakraborty, A ;

Haskell, BA ;

Keller, S ;

Speck, JS ;

Denbaars, SP ;

Nakamura, S ;

Mishra, UK .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (1-7) :L173-L175

[22] Effects of Si-doping in the barriers of InGaN multiquantum well purplish-blue laser diodes [J].

Chichibu, S ;

Cohen, DA ;

Mack, MP ;

Abare, AC ;

Kozodoy, P ;

Minsky, M ;

Fleischer, S ;

Keller, S ;

Bowers, JE ;

Mishra, UK ;

Coldren, LA ;

Clarke, DR ;

DenBaars, SP .

APPLIED PHYSICS LETTERS, 1998, 73 (04) :496-498

[23] Exciton localization in InGaN quantum well devices [J].

Chichibu, S ;

Sota, T ;

Wada, K ;

Nakamura, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (04) :2204-2214

[24] Spontaneous emission of localized excitons in InGaN single and multiquantum well structures [J].

Chichibu, S ;

Azuhata, T ;

Sota, T ;

Nakamura, S .

APPLIED PHYSICS LETTERS, 1996, 69 (27) :4188-4190

[25] Band-gap separation in InGaN epilayers grown by metalorganic chemical vapor deposition [J].

Chichibu, S ;

Arita, M ;

Nakanishi, H ;

Nishio, J ;

Sugiura, L ;

Kokubun, Y ;

Itaya, K .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (05) :2860-2862

[26] Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures [J].

Chichibu, SF ;

Abare, AC ;

Minsky, MS ;

Keller, S ;

Fleischer, SB ;

Bowers, JE ;

Hu, E ;

Mishra, UK ;

Coldren, LA ;

DenBaars, SP ;

Sota, T .

APPLIED PHYSICS LETTERS, 1998, 73 (14) :2006-2008

[27] Origin of defect-insensitive emission probability in In-containing (Al, In, Ga) N alloy semiconductors [J].

Chichibu, Shigefusa F. ;

Uedono, Akira ;

Onuma, Takeyoshi ;

Haskell, Benjamin A. ;

Chakraborty, Arpan ;

Koyama, Takahiro ;

Fini, Paul T. ;

Keller, Stacia ;

Denbaars, Steven P. ;

Speck, James S. ;

Mishra, Umesh K. ;

Nakamura, Shuji ;

Yamaguchi, Shigeo ;

Kamiyama, Satoshi ;

Amano, Hiroshi ;

Akasaki, Isamu ;

Han, Jung ;

Sota, Takayuki .

NATURE MATERIALS, 2006, 5 (10) :810-816

[28] Visible light-emitting diodes using a-plane GaN-InGaN multiple quantum wells over r-plane sapphire [J].

Chitnis, A ;

Chen, C ;

Adivarahan, V ;

Shatalov, M ;

Kuokstis, E ;

Mandavilli, V ;

Yang, J ;

Khan, MA .

APPLIED PHYSICS LETTERS, 2004, 84 (18) :3663-3665

[29] Influence of Si doping on characteristics of InGaN/GaN multiple quantum wells [J].

Cho, YH ;

Song, JJ ;

Keller, S ;

Minsky, MS ;

Hu, E ;

Mishra, UK ;

DenBaars, SP .

APPLIED PHYSICS LETTERS, 1998, 73 (08) :1128-1130

[30]

CHRISTMAS UME, 2005, J APPL PHYS, V98

← 1 2 3 4 5 6 7 8 9 10 →