Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells

被引：246

作者：

Ryou, Jae-Hyun ^{[1
]}

Yoder, P. Douglas ^{[2
]}

Liu, Jianping

Lochner, Zachary

Kim, Hyunsoo

Choi, Suk

Kim, Hee Jin

Dupuis, Russell D. ^{[1
,3
]}

机构：

[1] Georgia Inst Technol, Ctr Compound Semicond, Sch Elect & Comp Engn, Atlanta, GA 30332 USA

[2] Georgia Inst Technol, Sch Elect & Comp Engn, Savannah, GA 31407 USA

[3] Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 2009年 / 15卷 / 04期

关键词：

Epitaxial growth; LEDs; piezoelectricity; quantum-confined Stark effect (QCSE); quantum wells; semiconductor lasers; LIGHT-EMITTING-DIODES; M-PLANE; HIGH-POWER; OPTICAL-PROPERTIES; PIEZOELECTRIC POLARIZATION; EPITAXIAL-GROWTH; THIN-FILMS; MACROSCOPIC POLARIZATION; ELECTRONIC-PROPERTIES; LOCALIZED EXCITONS;

D O I：

10.1109/JSTQE.2009.2014170

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reviews current technological developments in polarization engineering and the control of the quantum-confined Stark effect (QCSE) for InxGa1-xN-based quantum-well active regions, which are generally employed in visible LEDs for solid-state lighting applications. First, the origin of the QCSE in III-N wurtzite semiconductors is introduced, and polarization-induced internal fields are discussed in order to provide contextual background. Next, the optical and electrical properties of InxGa1-xN-based quantum wells that are affected by the QCSE are described. Finally, several methods for controlling the QCSE of InxGa1-xN-based quantum wells are discussed in the context of performance metrics of visible light emitters, considering both pros and cons. These strategies include doping control, strain/polarization field/electronic band structure control, growth direction control, and crystalline structure control.

引用

页码：1080 / 1091

页数：12

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