Fluorinated InGaZnO Thin-Film Transistor With HfLaO Gate Dielectric

被引：46

作者：

Qian, Ling Xuan ^{[1
]}

Lai, Peter T. ^{[1
]}

机构：

[1] Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Hong Kong, Peoples R China

来源：

IEEE ELECTRON DEVICE LETTERS | 2014年 / 35卷 / 03期

关键词：

Amorphous InGaZnO (a-IGZO); thin-film transistor (TFT); HfLaO; fluorine; plasma; ZINC-OXIDE;

D O I：

10.1109/LED.2013.2296895

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Fluorinated amorphous InGaZnO thin-film transistor with HfLaO gate dielectric has been studied by treating InGaZnO film in a CHF3/O-2 plasma. The saturation carrier mobility can be improved from 29.6 cm(2)/V . s to as high as 39.8 cm(2)/V . s. In addition, the passivation effect of the fluorination on the dominant donor-like traps at the InGaZnO/HfLaO interface is observed, as reflected by suppression of hysteresis phenomenon and smaller subthreshold swing. Measurement result of low-frequency noise further supports the improvement in electrical properties by the plasma treatment.

引用

页码：363 / 365

页数：3

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