Empirical nonlinear modeling for RF MOSFETs

被引：3

作者：

Lee, SH ^{[1
]}

机构：

[1] Hankuk Univ Foreign Studies, Dept Elect Engn, Yongin 449791, Kyungki Do, South Korea

来源：

INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING | 2004年 / 14卷 / 02期

关键词：

MOSFET; RF CMOS; nonlinear model; empirical model; parameter extraction;

D O I：

10.1002/mmce.10129

中图分类号：

TP39 [计算机的应用];

学科分类号：

081203 ; 0835 ;

摘要：

A new empirical model with an external substrate network is proposed to simulate the RF nonlinear characteristics of a MOSFET accurately in the wide range of operating bias points. An Accurate drain current equation is developed to model the nonlinear transconductance characteristics of a RF MOSFET, and improved nonlinear capacitance equations, are used. The values of modeled S-21 parameters using the new drain current equation show much better agreement with measured ones than those using the conventional. formula over the wide bias range, thus verifying the accuracy of the new model. (C) 2004 Wiley Periodicals, Inc.

引用

页码：182 / 189

页数：8