The effect of double doped nc-Si:H tunnel recombination junction in a-Si:H/c-Si tandem solar cells

被引：1

作者：

Lee, Sunhwa ^{[1
]}

Park, Jinjoo ^{[1
]}

Kim, Sangho ^{[2
]}

Kim, Youngkuk ^{[1
]}

Jeong, Chaehwan ^{[3
]}

Yi, Junsin ^{[1
,2
]}

机构：

[1] Sungkyunkwan Univ, Sch Informat & Commun Engn, Suwon 16419, South Korea

[2] Sungkyunkwan Univ, Dept Energy Sci, Suwon 16419, South Korea

[3] Korea Inst Ind Technol, Energy & Appl Opt Div, Gwangju 61012, South Korea

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2018年 / 33卷 / 07期

关键词：

tandem solar cell; tunnel recombination junction; simulation; silicon solar cell nc-Si:H; SINGLE JUNCTION; ELECTRIC-FIELD; PERFORMANCE; SIMULATION; EFFICIENCY; TRANSPORT;

D O I：

10.1088/1361-6641/aac87f

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, tunneling mechanisms controlling the a-Si:H thin film/c-Si tandem solar cell were investigated employing numerical simulation. First, the effect of doped nc-Si:H tunnel recombination junction (TRJ) was studied with different structures. The band diagram, electric field, and recombination rate characteristics were investigated under a dark condition with doped nc-Si: H TRJ. The trap-assisted model and field-dependent tunneling were used to model the recombination and transport influence of the valence band offset (Delta E-V) between the p-type layer of the top cell and TRJ in the high field region. Simulation results showed that the highest efficiency of 23.98% ( Short circuit current density, J(sc) = 18.74 mA cm(-2), open circuit voltage, V-oc = 1.565 V, fill factor, FF = 81.76%) could be obtained in the case of n/p nc-Si:H TRJ.

引用

页数：7

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