Determination of the Excition Binding Energy in CdSe Quantum Dots

被引：154
作者：
Meulenberg, Robert W. [1 ]
Lee, Jonathan R. I. [1 ]
Wolcott, Abraham [2 ]
Zhang, Jin Z. [2 ]
Terminello, Louis J. [1 ]
van Buuren, Tony [1 ]
机构：
[1] Lawrence Livermore Natl Lab, Livermore, CA 94550 USA
[2] Univ Calif Santa Cruz, Dept Chem, Santa Cruz, CA 95064 USA
来源：
ACS NANO | 2009年 / 3卷 / 02期
关键词：
CdSe; quantum dot; exciton; binding energy; photoemission; surface termination; X-RAY PHOTOEMISSION; ELECTRONIC-STRUCTURE; BAND-STRUCTURE; STATE; NANOCRYSTALS; SPECTROSCOPY; INTERFACES; PHOTOLUMINESCENCE; SUPERLATTICES; CRYSTALLITES;
D O I：
10.1021/nn8006916
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
The exciton binding energy (EBE) in CdSe quantum dots (QDs) has been determined using X-ray spectroscopy. Using X-ray absorption and photoemission spectroscopy, the conduction band (0) and valence band (VB) edge shifts as a function of particle size have been determined and combined to obtain the true band gap of the QDs (i.e., without an exciton). These values can be compared to the excitonic gap obtained using optical spectroscopy to determine the EBE. The experimental EBE results are compared with theoretical calculations on the EBE and show excellent agreement.
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收藏
页码：325 / 330
页数：6
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