Enhanced α-axis-oriented crystal growth of Nd-substituted bismuth titanate thin films with layer-by-layer crystallization

被引:15
作者
Chen, YC [1 ]
Sun, YM [1 ]
Lin, CP [1 ]
Gan, JY [1 ]
机构
[1] Natl Tsing Hua Univ, Dept Mat Sci & Engn, Hsinchu 30043, Taiwan
关键词
surface structure; X-ray diffraction; polycrystalline deposition; ferroelectric materials;
D O I
10.1016/j.jcrysgro.2004.05.010
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Nd-substituted bismuth titanate (Bi3.5Nd0.5Ti3O12, BNdT) films were prepared on Pt electrodes using chemical solution deposition. Enhanced a-axis-oriented crystal growth occurred when the crystallization was performed on every spin-coated layer with sufficiently thin thickness (similar to 20 nm). The remnant polarization (2P(r) similar to 38 muC/cm(2)) of the film derived by such a layer-by-layer crystallization method was significantly higher than that of the film derived with the conventional process (2P(r)similar to10 muC/cm(2)). Examination of structural evolution has indicated that, owing to the geometrical effect, the growth of (1 1 7)-oriented crystals was restricted by the layer thickness, while the growth of a-axis-oriented crystals was not. As a result, BNdT films prepared by layer-by-layer crystallization are dominated by a-axis-oriented crystals and show high remnant polarization. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:210 / 214
页数:5
相关论文
共 12 条
[1]   Ferroelectric properties and crystal structure of praseodymium-modified bismuth titanate [J].
Chon, U ;
Shim, JS ;
Jang, HM .
JOURNAL OF APPLIED PHYSICS, 2003, 93 (08) :4769-4775
[2]  
CHOU U, 2001, APPL PHYS LETT, V79, P3137
[3]   C-AXIS ORIENTED FERROELECTRIC SRBI2(TAXNB2-X)O-9 THIN-FILMS [J].
DESU, SB ;
VIJAY, DP .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 32 (1-2) :83-88
[4]   Structure control and characterization of SrBi2Ta2O9 thin films by a modified annealing method [J].
Hu, GD ;
Wilson, IH ;
Xu, JB ;
Cheung, WY ;
Wong, SP ;
Wong, HK .
APPLIED PHYSICS LETTERS, 1999, 74 (09) :1221-1223
[5]   Factors controlling the a-axis orientation of strontium bismuth tantalate thin films fabricated by chemical solution deposition [J].
Iijima, R .
APPLIED PHYSICS LETTERS, 2001, 79 (14) :2240-2242
[6]   Large remanent polarization of (Bi,Nd)4Ti3O12 epitaxial thin films grown by metalorganic chemical vapor deposition [J].
Kojima, T ;
Sakai, T ;
Watanabe, T ;
Funakubo, H ;
Saito, K ;
Osada, M .
APPLIED PHYSICS LETTERS, 2002, 80 (15) :2746-2748
[7]   Ferroelectric Bi3.25La0.75Ti3O12 films of uniform a-axis orientation on silicon substrates [J].
Lee, HN ;
Hesse, D ;
Zakharov, N ;
Gösele, U .
SCIENCE, 2002, 296 (5575) :2006-2009
[8]   Lanthanum-substituted bismuth titanate for use in non-volatile memories [J].
Park, BH ;
Kang, BS ;
Bu, SD ;
Noh, TW ;
Lee, J ;
Jo, W .
NATURE, 1999, 401 (6754) :682-684
[9]   Crystal and electronic structures of Bi4-xLaxTi3O12 ferroelectric materials [J].
Shimakawa, Y ;
Kubo, Y ;
Tauchi, Y ;
Asano, H ;
Kamiyama, T ;
Izumi, F ;
Hiroi, Z .
APPLIED PHYSICS LETTERS, 2001, 79 (17) :2791-2793
[10]   Orientation-dependent grain growth in La-doped bismuth titanate thin films prepared by chemical solution deposition [J].
Sun, YM ;
Chen, YC ;
Gan, JY ;
Hwang, JC .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 2002, 41 (8A) :L892-L894