Drive-current enhancement in Ge n-channel MOSFET using laser annealing for source/drain activation

被引：46
|
作者：
Zhang, Qingchun [1 ]
Huang, Jidong
Wu, Nan
Chen, Guoxin
Hong, Minghui
Bera, L. K.
Zhu, Chunxiang
机构：
[1] Natl Univ Singapore, Silicon Nano Device Lab, Dept Elect & Comp Engn, Singapore 119260, Singapore
[2] Natl Univ Singapore, Laser Microproc Lab, Dept Elect & Comp Engn, Singapore 119260, Singapore
[3] Inst Microelect, Singapore 117685, Singapore
来源：
IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 09期
关键词：
germanium; high-k gate dielectric; laser annealing (LA); MOSFET;
D O I：
10.1109/LED.2006.880655
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A gate-first self-aligned Ge nMOSFET with a metal gate and CVD HfO2 has been successfully fabricated using KrF laser annealing (LA) as dopant-activation annealing. By applying an aluminum laser reflector on TaN metal gate, source/drain (S/D) regions are selectively annealed without heating the gate stack. Small S/D resistance and good gate-stack integrity are achieved simultaneously. As a result, a larger drive current and a lower threshold voltage are achieved in Ge nMOSFET using LA activation than that using conventional rapid thermal annealing activation.
引用
收藏
页码：728 / 730
页数：3
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