High-speed modulation up to 10 Gbit/s with 1.55 μm wavelength InGaAlAsVCSELs

被引：37

作者：

Ortsiefer, M

Shau, R

Mederer, F

Michalzik, R

Rosskopf, J

Böhm, G

Köhler, F

Lauer, C

Maute, M

Amann, MC

机构：

[1] VertiLas GmbH, D-80939 Munich, Germany

[2] Tech Univ Munich, Walter Schottky Inst, D-85748 Garching, Germany

[3] Univ Ulm, Abt Optoelekt, D-89081 Ulm, Germany

来源：

ELECTRONICS LETTERS | 2002年 / 38卷 / 20期

关键词：

Buried tunnel junctions - Telecommunication wavelength - Threshold currents - Vertical cavity surface emitting laser;

D O I：

10.1049/el:20020819

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-performance InGaAlAs/InP vertical-cavity surface-emitting lasers (VCSELs) at 1.55 mum are demonstrated with superior output characteristics and modulation bandwidths up to 10 Gbit/s.

引用

页码：1180 / 1181

页数：2

共 4 条

[1] Small-signal frequency response of long-wavelength vertical-cavity lasers [J].

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IEEE PHOTONICS TECHNOLOGY LETTERS, 2001, 13 (10) :1049-1051

[2]

ORTSIEFER M, 2001, 27 EUR C OPT COMM EC, P44

[3] Electrically pumped 10 Gbit/s MOVPE-grown monolithic 1.3 μm VCSEL with GaInNAs active region [J].

Ramakrishnan, A ;

Steinle, G ;

Supper, D ;

Degen, C ;

Ebbinghaus, G .

ELECTRONICS LETTERS, 2002, 38 (07) :322-324

[4] Vertical-cavity surface-emitting laser diodes at 1.55 μm with large output power and high operation temperature [J].

Shau, R ;

Ortsiefer, M ;

Rosskopf, J ;

Böhm, G ;

Köhler, F ;

Amann, MC .

ELECTRONICS LETTERS, 2001, 37 (21) :1295-1296

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