Post develop inspection for the defect control by using Lasertec 9MD83SRII system

被引：4

作者：

Wang, A

Shen, W

Nakashima, T

Ozawa, K

机构：

来源：

19TH ANNUAL SYMPOSIUM ON PHOTOMASK TECHNOLOGY, PTS 1 AND 2 | 1999年 / 3873卷

关键词：

Lasertec; defect control inspection; resist development; dry etching;

D O I：

10.1117/12.373365

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

In this study, Lasertec 9MD83SRII die-to-die inspection system was used for the post develop resist layer inspection. Residue resist defects were detected after develop. Defect locations were recorded. This result was compared with the inspection result after the final etching. Defect formation mechanism for different types of defects has been discussed in detail. Certain possible improvements have been made and results have been examined by the same technique. This study is a good understanding to resolve issues, such as defect problems of chrome dry etching.

引用

页码：677 / 680

页数：4