Subthreshold current modeling for fully depleted short channel double-gate MOSFETs with consideration of structure asymmetry

被引：1

作者：

Liu, Xi ^{[1
]}

Jin, Xiaoshi ^{[1
]}

Lee, Jong-Ho ^{[2
,3
]}

机构：

[1] Shenyang Univ Technol, Sch Informat Sci & Engn, Shenyang, Peoples R China

[2] Seoul Natl Univ, Sch EECS Engn, Seoul 151742, South Korea

[3] Seoul Natl Univ, ISRC, Seoul 151742, South Korea

来源：

INTERNATIONAL JOURNAL OF NUMERICAL MODELLING-ELECTRONIC NETWORKS DEVICES AND FIELDS | 2014年 / 27卷 / 5-6期

关键词：

double-gate; MOSFETs; short channel; modeling; SLOPE;

D O I：

10.1002/jnm.1927

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have proposed a subthreshold current model for fully depleted short channel double-gate (DG) MOSFETs by considering the structure asymmetry. Potential distribution is derived by solving 2-D Poisson's equation using variable separation technique. The degraded subthreshold characteristics variations due to structure asymmetry such as the difference of oxide thicknesses or biases between front-gate and back-gate can be exactly described. Also, body doping and other deep nanoscale design parameters such as body thickness and channel length were considered. The models have been verified by comparing with device simulations' results and found very good agreement. Copyright (C) 2013 John Wiley & Sons, Ltd.

引用

页码：875 / 882

页数：8

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