TaN Versus TiN Metal Gate Input/Output pMOSFETs: A Low-Frequency Noise Perspective

被引：7

作者：

Simoen, Eddy ^{[1
]}

O'Sullivan, Barry ^{[2
]}

Ritzenthaler, Romain ^{[2
]}

Litta, Eugenio Dentoni ^{[2
]}

Schram, Tom ^{[2
]}

Horiguchi, Naoto ^{[2
]}

Claeys, Cor ^{[3
]}

机构：

[1] IMEC, EPI Grp, B-3001 Leuven, Belgium

[2] IMEC, B-3001 Leuven, Belgium

[3] Katholieke Univ Leuven, Elect Engn Dept, B-3000 Louvain, Belgium

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2018年 / 65卷 / 09期

关键词：

1/f noise; DRAM peripheral transistors; input/output (I/O) transistors; metal gate (MG); OXIDE-SEMICONDUCTOR; 1/F NOISE; INTERFACE; IMPACT; REPLACEMENT; RELIABILITY; FLUORINE; ELECTRODE; DEFECTS; MOSFETS;

D O I：

10.1109/TED.2018.2857849

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is shown that replacing a TiN effective work function metal by TaN results in a pronounced reduction of the low-frequency noise power spectral density (PSD) of thick-SiO2 input/output (I/O) DRAM peripheral pMOSFETs. The 1/f noise is originating from carrier number fluctuations, suggesting that the observed reduction results from a decrease of the oxide trap density in the SiO2. On the other hand, I/O pMOSFETs with a TiN gate deposited by different methods or used as a sacrificial gate in a gate replacement integration scheme yield a similar high 1/f noise PSD and corresponding oxide trap density.

引用

收藏

页码：3676 / 3681

页数：6

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