Linear and nonlinear intra-conduction band optical absorption in (In,Ga)N/GaN spherical QD under hydrostatic pressure

被引：59
作者：
El Ghazi, Haddou [1 ,2 ]
Jorio, Anouar [1 ]
Zorkani, Izeddine [1 ]
机构：
[1] LPS Fac Sci, Fes, Morocco
[2] CPGE Rabat, Rabat, Morocco
来源：
OPTICS COMMUNICATIONS | 2014年 / 331卷
关键词：
Quantum dot; Optical absorption; InGaN; Pressure effect; QUANTUM GENETIC ALGORITHM; APPLIED ELECTRIC-FIELD; HYDROGENIC IMPURITY; BINDING-ENERGY; DOT; COEFFICIENTS; NANOPARTICLES;
D O I：
10.1016/j.optcom.2014.05.055
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
Linear, third-order nonlinear and total optical absorption coefficients of intra-conduction band 1s-1p transition with hydrogenic shallow-donor impurity in wurtzite (In,Ga)N/GaN spherical quantum dot are reported. Hydrostatic pressure effect is investigated within the framework of single band effective-mass approximation using a combination of Quantum Genetic Algorithm (QGA) and Hartree-Fock-Roothaan (HFR) method. The results show that the pressure has a great influence on optical absorption coefficients of QDs. A blue-shift of the resonant peak is observed while the maximum of the amplitude of optical absorption coefficients decreases under hydrostatic pressure effect. A good agreement is shown compared with results of the finding. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码：73 / 76
页数：4
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