Quasi-Chemistry of Intrinsic Point Defects in Cadmium Telluride Thin Films

被引：9

作者：

Mazur, Tetyana ^{[1
]}

Prokopiv, Volodymyr ^{[1
]}

Turovska, Liliya ^{[1
]}

机构：

[1] Vasyl Stefanyk Precarpathian Natl Univ, Shevchenko Str 57, UA-76018 Ivano Frankivsk, Ukraine

来源：

MOLECULAR CRYSTALS AND LIQUID CRYSTALS | 2018年 / 671卷 / 01期

关键词：

Cadmium Telluride Films; Point Defects; Quasi-Chemical Reactions; Equilibrium Constants; Hot-Wall Epitaxy Method; Vacancies; ENERGIES;

D O I：

10.1080/15421406.2018.1542088

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The defect formation in cadmium telluride thin films when growing from the vapor phase by a hot-wall epitaxy method has been described with the help of quasi-chemical reactions. The analytical expressions of the dependences of concentration of free charge carriers and dominant intrinsic atomic defects on the technological factors (substrate temperature (S), evaporation temperature (E) and partial vapor pressure of cadmium ) have been obtained. It has been shown that the concentration of free charge carriers in CdTe films is determined by vacancies of cadmium and tellurium.

引用

页码：85 / 89

页数：5

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