Surface Resonant Raman Spectroscopy at Indium-Nanowire-Terminated Si(111)

被引：0
作者：
Esser, N. [1 ]
Fleischer, K. [2 ]
Chandola, S. [1 ,2 ]
McGilp, J. [2 ]
机构：
[1] ISAS Inst Analyt Sci, Dept Berlin, Albert Einstein Str 9, D-12489 Berlin, Germany
[2] Trinity Coll Dublin, Sch Phys, Dublin, Ireland
来源：
PHYSICS AND ENGINEERING OF NEW MATERIALS | 2009年 / 127卷
关键词：
SCATTERING; PHONONS; SEMICONDUCTORS; ANISOTROPY;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this article we analyse the surface vibrational modes of In terminated Si(111) surfaces by Raman spectroscopy. Surface Resonant Raman Spectroscopy allows us to identify a number of surface phonons with high spectral precision. The phase transition of the (4 x 1) to (8 x 2) surface structure is found to be accompanied by characteristic changes of the surface phonons. The surface phonon modes are discussed with respect to various structural models suggested.
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页码：247 / +
页数：2
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