Phase transition in a single VO2 nano-crystal: potential femtosecond tunable opto-electronic nano-gating

被引:36
作者
Maaza, M. [1 ,2 ]
Simo, A. [1 ,2 ]
Itani, B. M. [1 ,2 ]
Kana, J. B. Kana [1 ,3 ]
El Harthi, S. [1 ,2 ,4 ]
Bouziane, K. [1 ,2 ]
Saboungi, M. L. [1 ,2 ,5 ]
Doyle, T. B. [1 ,2 ,6 ]
Luk'yanchuk, I. [1 ,2 ,7 ]
机构
[1] Univ S Africa, Coll Grad Studies, ZA-0001 Pretoria, South Africa
[2] Natl Res Fdn South Africa, IThemba LABS, Nanosci African Network NANOAFNET, ZA-7129 Somerset West, Western Cape, South Africa
[3] Univ Arizona, Dept Mat Sci & Engn, Tucson, AZ 85721 USA
[4] Sultan Qaboos Univ, Dept Phys, Coll Sci, Muscat Masqat, Oman
[5] CNRS, Ctr Rech Mat Ultradivisee, F-45071 Orleans, France
[6] Univ KwaZulu Natal, Sch Chem & Phys, ZA-4001 Durban, South Africa
[7] Univ Picardie Jules Verne, LPMC, F-80039 Amiens, France
基金
新加坡国家研究基金会;
关键词
VO2; Mott transition; Single nano-crystal; Band gap; Scanning tunneling spectroscopy; Opto-electronic nano-gating; Instrumentation; INSULATOR-TRANSITION; FILM; NANOSTRUCTURES;
D O I
10.1007/s11051-014-2397-z
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The first-order semiconductor-metal Mott transition in single nano-crystal of VO2 has been observed using scanning tunneling spectroscopy. The variation of the band gap E-g with an external thermal stimulus on a single VO2 nano-crystal in the temperature range of 293.5-361.0 K is reported for the first time. The corresponding tuneable I-V characteristics versus temperature could be applied in thermally or optically tunable electronic nano-gating in the femto-second regime in view of the ultrafast dynamic in VO2.
引用
收藏
页数:8
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